机译:GaSb / InAsSb核/壳纳米线的载流子控制和传输调制
Solid State Physics, Lund University, Box 118, SE-221 00 Lund, Sweden;
Polymer & Materials Chemistry, Lund University, Box 124, SE-221 00 Lund, Sweden;
Solid State Physics, Lund University, Box 118, SE-221 00 Lund, Sweden;
Solid State Physics, Lund University, Box 118, SE-221 00 Lund, Sweden,Polymer & Materials Chemistry, Lund University, Box 124, SE-221 00 Lund, Sweden;
Solid State Physics, Lund University, Box 118, SE-221 00 Lund, Sweden;
Electrical & Information Technology, Lund University, Box 118, SE-221 00 Lund, Sweden;
Solid State Physics, Lund University, Box 118, SE-221 00 Lund, Sweden;
机译:GaSb / InAsSb核/壳纳米线的载流子控制和传输调制
机译:InAs(Sb)/ GaSb核壳纳米线的选择性区MOCVD生长和载流子传输类型控制
机译:Ge / Si核/壳纳米线中的传输调制通过掺杂的Si壳的受控合成
机译:分子束外延生长的GaAs / InAs核壳纳米线中的载流子传输
机译:调整核-壳和核-多壳纳米线中的光学和等离子体共振。
机译:InAs / GaSb和GaSb / InAs核-壳纳米线的能带反转间隙
机译:选择性面积MOCVD生长和载体运输型控制INAS(SB)/ GASB CORESHELL纳米线
机译:用于GaN,GaN / alGaN和GaN / InGaN核壳纳米线中少数载流子扩散的无接触测量的传输成像。