机译:极性和晶格结构不匹配的CdTe / PbTe单异质结的等离子体增强中红外发光
Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China;
Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China;
Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China;
Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China;
Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China;
School of Electrical and Computer Engineering, Oklahoma University, Norman, Oklahoma 73019-1023, USA;
机译:极性和晶格结构不匹配的CdTe / PbTe单异质结的等离子体增强中红外发光
机译:极性晶格结构不匹配的界面的电子结构计算:PbTe / CdTe(100)
机译:极性CdTe / PbTe异质结中二维电子气对声子的阻挡
机译:极性CdTe / PbTe异质结构增强中红外发光
机译:量子点:中红外发光,(110)生长,单点电致发光和裂边对齐。
机译:通过优化MgO层间厚度从ZnO量子点基/ GaN异质结二极管中装饰银的局部表面等离子体增强紫外电致发光
机译:同型p-PbTe / p-CdTe异质结中的注入电流和红外光敏性
机译:HgCdTe,HgZnTe,相关异质结和HgCdTe-CdTe超晶格的分子束外延生长,表征和电子器件加工。