Physical insights on comparable electron transport in (100) and (110) double-gate fin field-effect transistors

摘要

We have investigated the physical mechanisms that result in comparable electron mobility measured from (100) and (110) sidewall double-gate fin field-effect transistors (FinFETs). Using a self-consistent Schrodinger-Poisson simulator coupled with a sp~3d~5s~* tight-binding bandstructure, we have shown that the (100)/(100) and (110)/(110) average conductivity effective mass values are similar. This is explained by the much heavier non-parabolic confinement mass for △_2 valley of (110) FinFETs, which leads to lower △_2 energy than △_4. Thus, for both (100) and (110), the majority of electrons occupy the △_2 valley with 0.19m_o conductivity effective mass, resulting in comparable electron mobility.