机译:具有陡峭的亚阈值斜率和高开关电流比的隧道感应注入场效应晶体管
Institute of Microelectronics, Peking University, Beijing 100871, China;
Institute of Microelectronics, Peking University, Beijing 100871, China;
Institute of Microelectronics, Peking University, Beijing 100871, China;
Institute of Microelectronics, Peking University, Beijing 100871, China;
Institute of Microelectronics, Peking University, Beijing 100871, China;
机译:具有陡峭的亚阈值斜率和高开关电流比的隧道感应注入场效应晶体管
机译:GaN基负电容异质结场效应晶体管,具有& 30?MV / DEC亚阈值斜率,用于陡峭的切换操作
机译:具有陡峭的亚阈值斜率和高开关态电流比的硅掺杂氧化ha铁电PN–PN–PN SOI隧穿场效应晶体管
机译:呈现5mV / dec的陡峭亚阈值斜率和高ION / IOFF比的电阻栅场效应晶体管
机译:合成的WSE2场效应晶体管和陡峭晶体管的过程
机译:二维电致伸缩场效应晶体管(2D-EFET):60mV /十倍以下陡峭斜率器件具有高导通电流
机译:具有陡峭亚阈值斜率的β-Ga2O3纳米膜负电容场效应晶体管用于宽带隙逻辑应用