...
机译:InGaN / GaN蓝色发光二极管中电流溢出的实验确定及其对效率下降的影响
Department of Physics, Kongju National University, Kongju, Chungnam 314-701, South Korea;
Department of Physics, Kongju National University, Kongju, Chungnam 314-701, South Korea;
Department of Physics, Kongju National University, Kongju, Chungnam 314-701, South Korea;
Department of Physics, Kongju National University, Kongju, Chungnam 314-701, South Korea;
Department of Physics, Kongju National University, Kongju, Chungnam 314-701, South Korea;
THELEDS Co., Ltd., Gwangju 546-12, South Korea;
THELEDS Co., Ltd., Gwangju 546-12, South Korea;
THELEDS Co., Ltd., Gwangju 546-12, South Korea;
THELEDS Co., Ltd., Gwangju 546-12, South Korea;
THELEDS Co., Ltd., Gwangju 546-12, South Korea;
机译:实验研究电子从量子阱溢出到p侧GaN中及其对InGaN / GaN蓝光二极管中效率下降的影响
机译:高电流密度下GaN LED的效率下降:隧穿漏电流和InGaN / GaN量子阱中不完整的横向载流子局部化
机译:从Ingan / GaN量子井缺陷辅助载体隧穿的发光二极管的电流噪声和效率下垂
机译:使用AlGaN / GaN超晶格结构减少InGaN / GaN多量子阱发光二极管的效率下降
机译:研究和优化GaN基发光二极管中的载流子传输,载流子分布和效率下降
机译:理解基于InGaN的发光二极管效率下降的实验方法综述
机译:InGaN / GaN多量子阱发光二极管中电流分布不均匀的效率下降