Solution-based silk fibroin dielectric in n-type C_(60) organic field-effect transistors: Mobility enhancement by the pentacene interlayer

摘要

A pentacene interlayer of 2 nm thick is inserted between fullerene (C_(60)) and the solution-based silk fibroin dielectric in C_(60) organic field-effect transistors (OFETs). The pentacene interlayer assists to improve crystal quality of the C_(60) layer, leading to the increase of field-effect mobility (μ_(FE)) from 0.014 to 1 cm~2 V~(-1) s~(-1) in vacuum. The μ_(FE) value of the C_(60) OFET is further enhanced to 10cm~2V~(-1)s~(-1) when the OFET is exposed to air in a relative humidity of 55%. Generation of mobile and immobile charged ions in solution-based silk fibroin in air ambient is proposed.