The influence of dual-carrier recombination and release on electrical characteristics of pentacene-based ambipolar transistors

摘要

Electrical characteristics of pentacene-based ambipolar organic field-effect transistors (OFETs) are examined and are shown to significantly differ from those of unipolar OFETs. The electrical and hysteresis characteristics of the ambipolar OFETs depend on the applied source-drain bias and sweeping gate voltage range. The ambipolar OFET characteristics, such as charge mobility, subthreshold swing, threshold voltage, and off-current level, are controlled by the dual-carrier recombination and release process, through which opposite-sign charges can capture and release majority charges. This study contributes to advancing the development of more applications based on ambipolar OFETs.