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机译:金属有机气相外延生长的具有短激子寿命的非极性(11-20)InGaN量子点
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street,Cambridge CB2 3QZ, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street,Cambridge CB2 3QZ, United Kingdom;
Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street,Cambridge CB2 3QZ, United Kingdom;
Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street,Cambridge CB2 3QZ, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street,Cambridge CB2 3QZ, United Kingdom;
机译:金属有机气相外延生长的具有短激子寿命的非极性(11-20)InGaN量子点
机译:使用两种温度方法通过金属有机气相外延生长非极性(11-20)InGaN量子点
机译:通过金属有机气相外延生长具有底层AlN / GaN分布的Bragg反射器的非极性InGaN量子点
机译:金属 - 有机气相外延生长的INP / GAINP量子点的结构和光学各向异性
机译:控制金属有机气相外延生长的III-V薄膜中Bi掺入的热力学和动力学因素
机译:分子束外延生长GaN基体中准2D InGaN的激子发射
机译:金属有机气相外延生长的具有短激子寿命的非极性(11-20)InGaN量子点