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机译:通过金属有机气相外延生长具有底层AlN / GaN分布的Bragg反射器的非极性InGaN量子点
Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom;
Experimental Techniques Centre, Brunei University, Uxbridge UB8 3PH, United Kingdom;
Experimental Techniques Centre, Brunei University, Uxbridge UB8 3PH, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom;
Cathodoluminescence; Nitride; InGaN quantum dots; Metal-organic vapour phase epitaxy;
机译:使用两种温度方法通过金属有机气相外延生长非极性(11-20)InGaN量子点
机译:在Si(111)衬底上具有AlN / GaN分布布拉格反射器的垂直导电InGaN / GaN多量子阱LED
机译:使用CdS量子点和分布式Bragg反射器提高InGaN / GaN多量子阱太阳能电池的效率
机译:铟对金属有机气相外延的Aln / GaN分布式Bragg反射器生长的表面活性剂效应
机译:铍基II-VI半导体材料和分布式布拉格反射器的分子束外延生长和表征,有望在可见光发射器中应用。
机译:通过电化学孔隙化法制备非极性介孔GaN分布布拉格反射镜的晶圆级
机译:支持“通过有机金属气相外延生长具有底层AlN / GaN分布的Bragg反射器的非极性InGaN量子点”的研究数据