Carrier transport in green AllnGaN based structures on c-plane substrates

摘要

In this paper, the carrier transport in (Al)InGaN based test structures with In-rich quantum wells on c-plane substrates is investigated under high current operation. To get access to the injection efficiency, the devices are processed as ridge waveguide lasers and examined above threshold. The slope efficiency reveals a slight decrease as a function of current even under pulsed operation that can be related to a reduction of the injection efficiency based on carrier leakage. As the test structure contains an InGaN detection layer on the n-side, it is possible to verify hole overflow across the active region. Moreover, by analysing the current dependence of the radiative recombination in the detection layer, the reduction of slope efficiency can be correlated to increasing hole leakage.