机译:具有超薄金纳米线的单个电子晶体管作为单个库仑岛
Department of Applied Physics and Physico-Informatics, Faculty of Science and Technology, Keio University, Hiyoshi, Yokohama 223-8522, Japan;
International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Namiki, Tsukuba, Ibaraki 305-0044, Japan;
Ecole Polytechnique Federale de Lausanne (EPFL), Nanoelectronic Devices Laboratory (NANOLAB), CH-1015 Lausanne, Switzerland;
Department of Applied Physics and Physico-Informatics, Faculty of Science and Technology, Keio University, Hiyoshi, Yokohama 223-8522, Japan;
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;
Department of Applied Physics and Physico-Informatics, Faculty of Science and Technology, Keio University, Hiyoshi, Yokohama 223-8522, Japan;
Department of Applied Physics and Physico-Informatics, Faculty of Science and Technology, Keio University, Hiyoshi, Yokohama 223-8522, Japan;
机译:库仑振荡引起的单岛单电子晶体管负微分电导的分析
机译:Si单电子晶体管库仑岛中电子平均位置的涨落
机译:单电子晶体管纳米间隙电极内生物合成库仑岛的自对准放置
机译:金纳米间隙之间电迁移的库仑岛中的单电子隧穿效应
机译:单个硫化镉纳米片和单个磷化镓/砷化镓纳米线异质结构的光电研究。
机译:基于单晶VO2纳米线的固态场效应晶体管中增强的电子传输调制
机译:绝缘体上硅纳米线上具有电形成的库仑岛的单电子隧穿晶体管的制造
机译:具有单一势垒的纳米场效应晶体管中的单电子库仑阻塞