机译:隧道场效应晶体管的能带工程和拉伸应变Ge /(Si)GeSn异质结构的生长
Peter Gruenberg Institute 9 (PGI 9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Juelich, 52425 Juelich, Germany;
Peter Gruenberg Institute 9 (PGI 9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Juelich, 52425 Juelich, Germany;
Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom;
Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom;
Peter Gruenberg Institute 9 (PGI 9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Juelich, 52425 Juelich, Germany;
Peter Gruenberg Institute 9 (PGI 9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Juelich, 52425 Juelich, Germany;
Peter Gruenberg Institute 9 (PGI 9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Juelich, 52425 Juelich, Germany;
Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom;
CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France;
Peter Gruenberg Institute 9 (PGI 9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Juelich, 52425 Juelich, Germany;
Peter Gruenberg Institute 9 (PGI 9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Juelich, 52425 Juelich, Germany;
Peter Gruenberg Institute 9 (PGI 9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Juelich, 52425 Juelich, Germany;
机译:隧道场效应晶体管的能带工程和拉伸应变Ge /(Si)GeSn异质结构的生长
机译:隧道场效应晶体管的应变应变纳米Ge / In_(0.16)Ga_(0.84)As异质结构
机译:基于p-i-n二极管的压缩应变SiGe带间隧穿模型校准及应变SiGe隧穿场效应晶体管的前景
机译:迈向P沟道隧穿场效应晶体管(TFET)中的直接带间隧穿:锗锡(GeSn)技术的支持
机译:低功率隧道场效应晶体管的混合As / Sb和拉伸应变的Ge / InGaAs异质结构
机译:高性能漏极工程InGaN异质结构隧道场效应晶体管
机译:隧道场效应晶体管的能带工程和拉伸应变Ge /(Si)GeSn异质结构的生长