机译:施主-受主层顺序对基于钯酞菁和C60的光敏有机场效应晶体管的影响
Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China;
Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China;
Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China;
Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China;
Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China;
Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China;
Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China,Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, People's Republic of China;
机译:施主-受主层顺序对基于钯酞菁和C60的光敏有机场效应晶体管的影响
机译:咔唑基共轭聚合物驻极体对光反应闪光有机场效应晶体管存储器的影响
机译:基于酞菁铜和C60本体异质结的双极有机场效应晶体管的混合比相关性能
机译:基于钯酞菁的光敏有机场效应晶体管的厚度依赖性性能
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机译:高性能Znpc薄膜光敏有机场效应晶体管:多层介质体系和薄膜生长结构的影响
机译:al sub x Ga sub 1-x作为缓冲层对调制掺杂场效应晶体管性能的影响