首页> 外文期刊>Applied Physics Letters >Influence of donor-acceptor layer sequence on photoresponsive organic field-effect transistors based on palladium phthalocyanine and C60
【24h】

Influence of donor-acceptor layer sequence on photoresponsive organic field-effect transistors based on palladium phthalocyanine and C60

机译:施主-受主层顺序对基于钯酞菁和C60的光敏有机场效应晶体管的影响

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

Photoresponsive organic field-effect transistors (PhotOFETs) based on palladium phthalocyanine (PdPc) and C60 were fabricated with different donor-acceptor layer sequences. Both planar heterojunction devices fabricated exhibit better performance under illumination than the single PdPc device. PhotOFETs with the structure SiO_2/C60/PdPc/Au exhibit a higher photosensitivity and photoresponsivity than that with the structure SiO_2/PdPc/C60/Au. The origin for this is largely the high mobility of C60 and the well-matched LUMO levels of PdPc and C60. The maximum photosensitivity of the SiO_2/C60/PdPc/Au device is 8 × 10~3, and, the photoresponsivity is approximately 28 times that of the single component PdPc device.
机译:基于钯酞菁(PdPc)和C60的光响应有机场效应晶体管(PhotOFET)用不同的施主-受主层顺序制造。所制造的两个平面异质结器件在光照下均比单个PdPc器件表现出更好的性能。结构SiO_2 / C60 / PdPc / Au的PhotOFET的光敏性和光响应性高于结构SiO_2 / PdPc / C60 / Au的PhotOFET。造成这种情况的主要原因是C60的高迁移率以及PdPc和C60的LUMO含量完全匹配。 SiO_2 / C60 / PdPc / Au器件的最大光敏度为8×10〜3,光响应性约为单组分PdPc器件的28倍。

著录项

  • 来源
    《Applied Physics Letters》 |2013年第16期|163303.1-163303.5|共5页
  • 作者单位

    Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China;

    Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China;

    Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China;

    Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China;

    Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China;

    Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China;

    Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China,Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号