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首页> 外文期刊>Applied Physics Letters >Ferroelectric memristor based on Pt/BiFeO_3/Nb-doped SrTiO_3 heterostructure
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Ferroelectric memristor based on Pt/BiFeO_3/Nb-doped SrTiO_3 heterostructure

机译：基于Pt / BiFeO_3 / Nb掺杂的SrTiO_3异质结构的铁电忆阻器

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摘要

We report a continuously tunable resistive switching behavior in Pt/BiFeO_3/Nb-doped SrTiO_3 heterostructure for ferroelectric memristor application. The resistance of this memristor can be tuned up to 5 × 10~5% by applying voltage pulses at room temperature, which exhibits excellent retention and anti-fatigue characteristics. The observed memristive behavior is attributed to the modulation effect of the ferroelectric polarization reversal on the width of depletion region and the height of potential barrier of the p-n junction formed at the BiFeO_3/Nb-doped SrTiO_3 interface.
机译：我们报告了在铁电忆阻器应用中Pt / BiFeO_3 / Nb掺杂SrTiO_3异质结构中的连续可调电阻开关行为。通过在室温下施加电压脉冲，该忆阻器的电阻可调节至5×10〜5％，具有出色的保持力和抗疲劳特性。观察到的忆阻行为归因于铁电极化反转对耗尽区宽度和在BiFeO_3 / Nb掺杂SrTiO_3界面上形成的p-n结势垒高度的调制效应。

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  • 来源
    《Applied Physics Letters 》 |2013年第10期| 102901.1-102901.5| 共5页
  • 作者

    Zhongqiang Hu; Qian Li; Meiya Li; Qiangwen Wang; Yongdan Zhu; Xiaolian Liu; Xingzhong Zhao; Yun Liu; Shuxiang Dong;

  • 作者单位

    School of Physics and Technology, and Key Laboratory of Artificial MicrolNano Structures ofMinistry of Education, Wuhan University, Wuhan 430072, People's Republic of China Present address: Energy System Division, Argonne National Laboratory,Argonne, Illinois 60439, USA;

    Research School of Chemistry, The Australian National University, ACT 0200, Australia;

    School of Physics and Technology, and Key Laboratory of Artificial MicrolNano Structures of Ministry of Education, Wuhan University, Wuhan 430072, People's Republic of China;

    School of Physics and Technology, and Key Laboratory of Artificial MicrolNano Structures of Ministry of Education, Wuhan University, Wuhan 430072, People's Republic of China;

    School of Physics and Technology, and Key Laboratory of Artificial MicrolNano Structures of Ministry of Education, Wuhan University, Wuhan 430072, People's Republic of China;

    School of Physics and Technology, and Key Laboratory of Artificial MicrolNano Structures of Ministry of Education, Wuhan University, Wuhan 430072, People's Republic of China;

    School of Physics and Technology, and Key Laboratory of Artificial MicrolNano Structures of Ministry of Education, Wuhan University, Wuhan 430072, People's Republic of China;

    Research School of Chemistry, The Australian National University, ACT 0200, Australia;

    Department of Materials Science and Engineering, College of Engineering, Peking University,Beijing 100871, People's Republic of China;

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