Ferroelectricity-induced resistive switching in Pb(Zr_(0.52)Ti_(0.48))O_3/Pr_(0.7)Ca_(0.3)MnO_3/Nb-doped SrTiO_3 epitaxial heterostructure

摘要

We investigated the effect of a ferroelectric Pb(Zr_(0.52)Ti_(0.48))O_3 (PZT) thin film on the generation of resistive switching in a stacked Pr_(0.7)Ca_(0.3)MnO_3 (PCMO)/Nb-doped SrTiO_3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/ Nb:STO p-n junction's depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously.