Ferroelectric polarization effect on Al-Nb codoped Pb(Zr _(0.52)Ti_(0.48))O_3/Pr_(0.7)Ca _(0.3)MnO_3 heterostructure resistive memory

摘要

This work presents the investigation of resistive switching memory in a perovskite heterostructure composed of an active Al-Nb codoped Pb(Zr _(0.52)Ti_(0.48))O_3 ferroelectric thin film and a semiconducting Pr_(0.7)Ca_(0.3)MnO_3 manganite-based oxide film, both sandwiched between Pt electrodes in a parallel capacitor-like structure. Bipolar resistive switching nature was confirmed from the measured characteristics of the DC I-V hysteresis loop and resistance switching in the pulse mode. The active ferroelectric layer has been demonstrated to play a crucial role in controlling the switching memory performance (resistance state stability and high switching endurance). Ferroelectric polarization and corresponding piezoelectric effect-induced lattice strains are found to be responsible for the resistive switching characteristics in this ferroelectric/manganite heterojunction.