Quantum simulation of topological insulator based spin transfer torque device

摘要

We developed a quantum transport model to simulate transport properties of topological insulator (TI)-based spintronic memory devices. The model captures the effects of spin-momentum locking, Klein tunneling, and coupled spin dynamics. Based on the model, we present a design of spin-transfer torque (STT) device, which consists of a thin layer TI coupled to a top ferromagnetic film. The device removes the requirement of spin-polarized contacts and magnetic tunnel junctions in conventional STT memory cells by exploiting intrinsic spin-momentum locking of the TI surface states. The analysis shows that by introducing partial perpendicular magnetic anisotropy, both fast switching and low switching current can be achieved.