Surface plasmon modulation induced by a direct-current electric field into gallium nitride thin film grown on Si(111) substrate

摘要

We report here the experimental results on a field effect refractive index change into gallium nitride (GaN) structures. This effect is characterized through the common prism-coupling technique with the application of a vertical direct-current electric field. Surface plasmon propagation was used to increase the sensitivity of the electro-optic measurements. We have obtained a large refractive index variation for GaN epilayer, around 1.4 × 10~(-2) at 1.55μm wavelength. In order to understand the origin of the index modulation, we have conducted a scanning transmission electron microscopy analysis and discussed the influence of threading dislocations density acting as traps and thermo-optic effect. According to recent works, we observed experimentally the optical response of a nonlinear electro-optic effect on GaN on Si(111) substrate and estimated a Kerr coefficient of about 2.14 × 10~(-16)m~2 V~(-2).