机译:Si(111)7×7基板上Ag(111)薄膜的表面态的位错诱导局部调制
Department of Materials Science and Engineering, Tokyo Institute of Technology, JI-3, 4259 Nagatsuda, Midori-ku, Yokohama 226-8502, Japan;
Department of Materials Science and Engineering, Tokyo Institute of Technology, JI-3, 4259 Nagatsuda, Midori-ku, Yokohama 226-8502, Japan;
Department of Materials Science and Engineering, Tokyo Institute of Technology, JI-3, 4259 Nagatsuda, Midori-ku, Yokohama 226-8502, Japan;
electron states at surfaces and interfaces; metal and metallic alloys;
机译:Si(111)3〜(1/2)×3〜(1/2)-B衬底上异质外延生长的Ag(111)超薄膜表面的规则波纹
机译:Si(111)衬底和√3×√3-Ag_2Bi表面修饰的超薄Ag(111)薄膜的电子结构研究
机译:Si(111)7×7衬底上Ag(111)超薄膜的Shockley型表面态的厚度依赖性
机译:Co_3簇对Cu(111),Pd(111),Ne(111)和两个极性ZnO表面的磁性和底物效应
机译:锗(111)相变上的铅和铜(111)磁性表面合金上的铁(x)/镍(1-x)的薄膜显微镜观察。
机译:在3C-SiC(111)/ Si(111)基板上进行ZnO(002)薄膜的RF溅射退火后处理和表征
机译:沉积在H钝化的Si(111)-(1x1)表面上的超薄Ag(111)薄膜中的量子阱态
机译:在si(111)上生长的邻近si(111)表面和ag薄膜的RHEED研究