Magnetoelectric coupling in Tb_(0.3)Dy_(0.7)Fe_2/Pt/PbZr_(0.56)Ti_(0.44)O_3 thin films deposited on Pt/TiO_2/SiO_2/Si substrate

摘要

Tb_(0.3)Dy_(0.7)Fe_2/Pt/PbZr_(0.56)Ti_(0.44)O_3 (Terfenol-D/Pt/PZT) thin films were sputtered on Pt/TiO_2/SiO_2/Si substrate. PZT and Terfenol-D layers were chosen for their large piezoelectric and magnetostrictive coefficients, respectively. 4%-5% magnetocapacitance has been measured on a Terfenol-D/Pt/PZT stack at room temperature. A magnetoelectric (ME) voltage coefficient of 150mV/cmOe was obtained at low dc magnetic field out of mechanical resonance. This work demonstrates the possibility to achieve ME effect in integrated devices involving Terfenol-D and PZT thin films providing that the diffusion, which may occur between both active layers is reduced using an intermediate layer.