Magnetoelectric Coupling in Tb_(0.3)Dy_(0.7)Fe_(1.92)/PbZr_(0.3)Ti_(0.7)O_3 Bilayer Thin Films

摘要

The magnetoelectric (ME) properties of Tb_(0.3)Dy_(0.7)Fe_(1.92) (Terfenol-D)/PbZr_(0.3)Ti_(0.7)O_3 (PZT) thin films grown on a Pt(111)/Ti/SiO_2/Si(100) substrate were investigated. The ferroelectric behavior of a Terfenol-D/PZT bilayer film stack was examined by polarization-electric field hysteresis measurement. The remnant polarization (P_r) and coercive field (E_c) values were found as 31 μC/cm~2 and 124 kV/cm, respectively. The magnetic behavior was observed using a vibration sample magnetometer (VSM) at 300 K with saturation magnetization (M_s) and coercivity (H_c) values of 6.7 emu/cm~3 and 70 Oe, respectively. The application of magnetic field caused a piezomagnetic strain in the Terfenol-D layer hence, the piezoelectric voltage or charge in the PZT thin film was induced. The maximum magnetoelectric voltage coefficient (dE/dH) value of approximately 40 mVcm~(-1) Oe~(-1) was obtained at the magnetic field of 5kOe.