High-performance chemical-bath deposited CdS thin-film transistors with ZrO_2 gate dielectric

摘要

We demonstrate high performance chemical bath deposited CdS thin-film transistors (TFTs) using atomic layer deposited ZrO_2 based high-k gate dielectric material. Our unique way of isolation of the CdS-based TFTs devices yielded significantly low leakage current as well as remarkable lower operating voltages (＜5 V) which is four times smaller than the devices reported on CdS-based TFTs using SiO_2 gate dielectric. Upon thermal annealing, the devices demonstrate even higher performance, including μ_(FE) exceeding 4 ± 0.2 cm~2 V~(-1)S~(-1), threshold voltage V_T of 3.8 V, and I_(on-off) of 10~4-10~5, which hold much promise for applications in future electronic and optical devices.