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首页> 外文期刊>Applied Physics Letters >Elemental diffusion during the droplet epitaxy growth of ln(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition
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Elemental diffusion during the droplet epitaxy growth of ln(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition

机译：金属有机化学气相沉积法在ln（Ga）As / GaAs（001）量子点的液滴外延生长过程中的元素扩散

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摘要

Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots (QDs). Droplet epitaxy of Ⅲ-Ⅴ QDs comprises group Ⅲ elemental droplet deposition and the droplet crystallization through the introduction of group V elements. Here, we report that, in the droplet epitaxy of InAs/GaAs(001) QDs using metal-organic chemical vapor deposition, significant elemental diffusion from the substrate to In droplets occurs, resulting in the formation of In(Ga)As crystals, before As flux is provided. The supply of As flux suppresses the further elemental diffusion from the substrate and promotes surface migration, leading to large island formation with a low island density.
机译：液滴外延是产生外延半导体量子点（QD）的重要方法。 Ⅲ-Ⅴ类量子点的液滴外延包括Ⅲ族元素液滴的沉积和通过引入Ⅴ族元素的液滴结晶。在这里，我们报告说，在使用金属有机化学气相沉积的InAs / GaAs（001）QD的液滴外延中，发生了从衬底到In液滴的大量元素扩散，导致形成了In（Ga）As晶体。提供助焊剂。 As助焊剂的供应抑制了元素从基板的进一步扩散，并促进了表面迁移，从而导致形成岛状结构且具有低岛状密度。

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  • 来源
    《Applied Physics Letters》 |2014年第2期|022108.1-022108.5|共5页
  • 作者

    Z. B. Chen; W. Lei; B. Chen; Y. B. Wang; X. Z. Liao; H. H. Tan; J. Zou; S. P. Ringer; C. Jagadish;

  • 作者单位

    School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006, Australia;

    School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Perth, WA 6009, Australia;

    School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006, Australia;

    School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006, Australia;

    School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006, Australia;

    Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia;

    Materials Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane, QLD 4072, Australia;

    School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006, Australia,Australian Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, NSW 2006, Australia;

    Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia;

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