Nanoscale calibration of n-type ZnO staircase structures by scanning capacitance microscopy

摘要

Cross-sectional scanning capacitance microscopy (SCM) was performed on n-type ZnO multilayer structures homoepitaxially grown by molecular beam epitaxy method. Highly contrasted SCM signals were obtained between the ZnO layers with different Ga densities. Through comparison with dopant depth profiles from secondary ion mass spectroscopy measurement, it is demonstrated that SCM is able to distinguish carrier concentrations at all levels of the samples (from 2 × 10~(17)cm~(-3) to 3 × 10~(20) cm~(-3)). The good agreement of the results from the two techniques indicates that SCM can be a useful tool for two dimensional carrier profiling at nanoscale for ZnO nanostructure development. As an example, residual carrier concentration inside the non-intentionally doped buffer layer was estimated to be around 2 × 10~(16)cm~(-3) through calibration analysis.