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首页> 外文期刊>Applied Physics Letters >Contact resistance improvement by the modulation of peripheral length to area ratio of graphene contact pattern
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Contact resistance improvement by the modulation of peripheral length to area ratio of graphene contact pattern

机译：通过调节石墨烯接触图案的周长与面积之比来改善接触电阻

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摘要

High contact resistance between graphene and metal is a major huddle for high performance electronic device applications of graphene. In this work, a method to improve the contact resistance of graphene is investigated by varying the ratio of peripheral length and area of graphene pattern under a metal contact. The contact resistance decreased to 0.8kΩ·μm from 2.1 kΩ·μm as the peripheral length increased from 312 to 792 μm. This improvement is attributed to the low resistivity of edge-contacted graphene, which is 8.1 × 10~5 times lower than that of top-contacted graphene.
机译：石墨烯与金属之间的高接触电阻是石墨烯高性能电子设备应用的主要障碍。在这项工作中，通过改变金属接触下石墨烯图案的周长与面积之比，研究了一种改善石墨烯接触电阻的方法。随着外围长度从312μm增加到792μm，接触电阻从2.1kΩ·μm减小到0.8kΩ·μm。这种改善归因于边缘接触石墨烯的低电阻率，该电阻率比顶部接触石墨烯的电阻率低8.1×10〜5倍。

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  • 来源
    《Applied Physics Letters》 |2015年第21期|213107.1-213107.4|共4页
  • 作者

    Chunhum Cho; Sang Kyung Lee; Jin Woo Noh; Woojin Park; Sangchul Lee; Young Gon Lee; Hyeon Jun Hwang; Chang Goo Kang; Moon-Ho Ham; Byoung Hun Lee;

  • 作者单位

    Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, 123 Chemdan-gwagiro, Buk-gu, Gwangju 500-712, South Korea;

    School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Chemdan-gwagiro, Buk-gu, Gwangju 500-712, South Korea;

    School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Chemdan-gwagiro, Buk-gu, Gwangju 500-712, South Korea;

    School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Chemdan-gwagiro, Buk-gu, Gwangju 500-712, South Korea;

    Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, 123 Chemdan-gwagiro, Buk-gu, Gwangju 500-712, South Korea;

    School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Chemdan-gwagiro, Buk-gu, Gwangju 500-712, South Korea;

    School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Chemdan-gwagiro, Buk-gu, Gwangju 500-712, South Korea;

    Korea Atomic Energy Research Institute, Advanced Radiation Technology Institute, 29, Geumgu-Gil, Jeongeup-Si, Jeollabuk-Do 580-185, South Korea;

    School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Chemdan-gwagiro, Buk-gu, Gwangju 500-712, South Korea;

    Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, 123 Chemdan-gwagiro, Buk-gu, Gwangju 500-712, South Korea,School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Chemdan-gwagiro, Buk-gu, Gwangju 500-712, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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