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Gamma radiation resistance of spin Seebeck devices

机译：自旋Seebeck装置的γ辐射抗性

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摘要

Thermoelectric devices based on the spin Seebeck effect (SSE) were irradiated with gamma (γ) rays with the total dose of around 3 × 10~5 Gy in order to investigate the γ-radiation resistance of the devices. To demonstrate this, Pt/Ni_(0.2)Zn_(0.3)Fe_(2.5)O_4/Glass and Pt/Bi_(0.1)Y_(2.9)Fe_5O_(12)/Gd_3Ga_5O_(12) SSE devices were used. We confirmed that the thermoelectric, magnetic, and structural properties of the SSE devices are not affected by the γ-ray irradiation. This result demonstrates that SSE devices are applicable to thermoelectric generation even in high radiation environments.
机译：为了研究器件的γ辐射抗性，以总剂量约为3×10〜5 Gy的伽玛（γ）射线辐照了基于自旋Seebeck效应（SSE）的热电器件。为了证明这一点，使用了Pt / Ni_（0.2）Zn_（0.3）Fe_（2.5）O_4 /玻璃和Pt / Bi_（0.1）Y_（2.9）Fe_5O_（12）/ Gd_3Ga_5O_（12）SSE器件。我们确认，SSE设备的热电，磁性和结构特性不受γ射线辐射的影响。该结果表明，即使在高辐射环境中，SSE设备也适用于热电发电。

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  • 来源
    《Applied Physics Letters》 |2016年第24期|243902.1-243902.4|共4页
  • 作者

    A. Yagmur; K. Uchida; K. Ihara; I. Ioka; T. Kikkawa; M. Ono; J. Endo; K. Kashiwagi; T. Nakashima; A. Kirihara; M. Ishida; E. Saitoh;

  • 作者单位

    Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan;

    Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan,National Institute for Materials Science, Tsukuba 305-0047, Japan,PRESTO, Japan Science and Technology Agency, Saitama 332-0012, Japan;

    IoT Devices Research Laboratories, NEC Corporation, Tsukuba 305-8501, Japan,Spin Quantum Rectification Project, ERATO, Japan Science and Technology Agency, Sendai 980-8577, Japan;

    Nuclear Science and Engineering Center, Japan Atomic Energy Agency, Ibaraki 319-1195, Japan;

    Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan,WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan;

    Research Center, Asahi Glass Co., Ltd., Yokohama 221-8755, Japan;

    Research Center, Asahi Glass Co., Ltd., Yokohama 221-8755, Japan;

    Research Center, Asahi Glass Co., Ltd., Yokohama 221-8755, Japan;

    Research Center, Asahi Glass Co., Ltd., Yokohama 221-8755, Japan;

    IoT Devices Research Laboratories, NEC Corporation, Tsukuba 305-8501, Japan,Spin Quantum Rectification Project, ERATO, Japan Science and Technology Agency, Sendai 980-8577, Japan;

    IoT Devices Research Laboratories, NEC Corporation, Tsukuba 305-8501, Japan,Spin Quantum Rectification Project, ERATO, Japan Science and Technology Agency, Sendai 980-8577, Japan;

    Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan,Spin Quantum Rectification Project, ERATO, Japan Science and Technology Agency, Sendai 980-8577, Japan,WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan,Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Japan,Advanced Science Research Center, Japan Atomic Energy Agency, Tokai 319-1195, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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