Minority carrier recombination of ordered Ga_(0.51)In_(0.49)P at high temperatures

摘要

The minority carrier lifetime of high-quality ordered GaInP lattice matched to GaAs and the surface recombination velocity at its interface to AlInP were measured using time-resolved photo-luminescence in the temperature range of 77-500 K. The surface recombination velocity was found to be relatively low (under 500 cm/s) over the measured temperature range. The effective lifetime increased with a temperature up to around 300 K, and then decreased in the 300-500 K range. The variations in the effective lifetime, caused by the variations in the bulk lifetime, are explained by considering the separate contributions of radiative and non-radiative recombination and their respective temperature dependencies.