Heterogeneously integrated Ⅲ-Ⅴ-on-silicon 2.3x μm distributed feedback lasers based on a type-Ⅱ active region

摘要

We report on 2.3x μm wavelength InP-based type-Ⅱ distributed feedback (DFB) lasers heterogeneously integrated on a silicon photonics integrated circuit. In the devices, a Ⅲ-Ⅴ epitaxial layer stack with a "W"-shaped InGaAs/GaAsSb multi-quantum-well active region is adhesively bonded to the first-order silicon DFB gratings. Single mode laser emission coupled to a single mode silicon waveguide with a side mode suppression ratio of 40 dB is obtained. In continuous-wave regime, the 2.32 μm laser operates close to room temperature (above 15 ℃) and emits more than 1 mW output power with a threshold current density of 1.8 kA/cm~2 at 5 ℃. A tunable diode laser absorption measurement of CO is demonstrated using this source.