Si:SrTiO_3-Al_2O_3-Si:SrTiO_3 multi-dielectric architecture for metal-insulator-metal capacitor applications

摘要

Metal-insulator-metal (MIM) capacitors comprised of amorphous Si:SrTiO_3-Al_2O_3-Si:SrTiO_3 multi-dielectric architecture have been fabricated employing a combination of pulsed laser and atomic layer deposition techniques. The voltage linearity, temperature coefficients of capacitance, dielectric and electrical properties upon thickness were studied under a wide range of temperature (200-400 K) and electric field stress (±1.5 MV/cm). A high capacitance density of 31 fF/μm~2, a low voltage coefficient of capacitance of 363 ppm/V~2, a low temperature coefficient of capacitance of ＜644ppm/K, and an effective dielectric constant of ～ 133 are demonstrated in a MIM capacitor with ～1.4nm capacitance equivalent thickness in a ～40nm thick ultra high-k multi-dielectric stack. All of these properties make this dielectric architecture of interest for next generation, highly scaled MIM capacitor applications.