Characterization and optimization of a new Cu/SiN/TaN/Cu damascene architecture for metal-insulator-metal capacitors

摘要

The MIM capacitor is a key passive component for analog and RF applications. To be integrated among copper interconnect levels, MIM capacitors have to be compatible with Back End Of Line processes and materials. In this way, a new MIM Cu/Si_3N_4/TaN/Cu stack has been implemented between upper copper interconnect levels using a damascene architecture. Physical and electrical characterizations were carried out to optimize processes, leading to the RF evaluation of high-performances MIM capacitors.