Square wave voltages-induced ON states of organic resistive memory devices

摘要

In organic resistive memory device field, alternating current (AC) has seldom been studied systematically. In the present work, square wave voltage pulses are considered to obtain memory switching to the ON state with voltage amplitude lower than the threshold voltage of the device, even with less time. The ON states induced by such AC depend on both frequency and amplitude. A possible mechanism related to filamentary formation was proposed to explain the AC induced effect.