机译:在精确的Si(001)衬底上外延生长的亚波长InAs量子点微盘激光器
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong;
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong;
Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA;
Sandia National Laboratories, Albuquerque, New Mexico 87185-1086, USA;
Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA,Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA;
Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA,Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA;
School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA;
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong;
机译:直接生长在(001)硅上的光泵浦1.3μm室温InAs量子点微盘激光器
机译:直接生长在(001)硅上的光泵浦1.3μm室温InAs量子点微盘激光器
机译:片上光源上硅外延生长的InAs量子点微盘激光器的温度特性
机译:直接在精确(001)硅上生长的1 µm InAs量子点微盘激光器
机译:INAS量子点激光在硅基板上的单片集成
机译:通过MOCVD在300mm GE缓冲的Si(001)衬底上产生的o频带Qualtum Dots
机译:在精确的Si(001)基板上外延生长的子波长Inas量子点微磁盘激光器