机译:由HfO_(2-x)N_x制成的忆阻器和选择器器件
The School of Applied Sciences, RMIT University, Melbourne, Victoria 3001, Australia;
The School of Applied Sciences, RMIT University, Melbourne, Victoria 3001, Australia;
Applied and Plasma Physics, The University of Sydney, Sydney, New South Wales 2006, Australia;
Applied and Plasma Physics, The University of Sydney, Sydney, New South Wales 2006, Australia;
Applied and Plasma Physics, The University of Sydney, Sydney, New South Wales 2006, Australia;
The School of Applied Sciences, RMIT University, Melbourne, Victoria 3001, Australia;
机译:氮相关缺陷对大功率脉冲磁控溅射沉积HfO_(2-x)N_x光学和电学行为的影响
机译:基于忆阻器交叉开关应用的基于石墨烯-氧化物异质结构的选择器装置
机译:纳米级3D可叠放的AG掺杂的掺杂HFOX系列式通过低温氢退火制造的选择器件
机译:用基于HFO_2的忆阻 - 细胞和超线性阈值选择器和基于HFO_2的整合和火神经元制造的焦点突触阵列
机译:了解未来存储和计算应用程序的忆阻器和选择器:建模和分析。
机译:用于忆阻器存储单元的三层隧道选择器
机译:纳米级3D可叠放的掺杂HFOX的选择器装置通过低温氢退火制造