Catalytically enhanced thermal decomposition of chemically grown silicon oxide layers on Si(001)

摘要

The thermal decomposition of Si dioxide layers formed by wet chemical treatment on Si(OOl) has been studied by low-energy electron microscopy. Independent nucleations of voids occur into the Si oxide layers that open by reaction at the void periphery. Depending on the voids, the reaction rates exhibit large differences via the occurrence of a nonlinear growth of the void radius. This non-steady state regime is attributed to the accumulation of defects and silicon hydroxyl species at the SiO_2/Si interface that enhances the silicon oxide decomposition at the void periphery.