机译:阳离子部分取代对Mn-Co-Ni-O薄膜电学性能的影响
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China,Department of Materials Science, Fudan University, 220 Handan Road, Shanghai 200433, China;
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China;
机译:Mn-Co-Ni-O薄膜的外延生长及其厚度对电性能的影响
机译:射频磁控溅射不同厚度生长Mn-Co-Ni-O薄膜的电学特性研究
机译:退火对Mn-Co-Ni-O薄膜的结构,电学和1 / f噪声特性的影响
机译:NTC热敏电阻施用Mn-Co-Ni-O薄膜的制备和电性能
机译:氧同位素对La1-xCaxMnO3外延薄膜电输运性能的影响
机译:金属热分解法制备的(NixMn1-x)0.84Cu0.16 3O4薄膜的电性能与阳离子分布的相关性
机译:锌取代对MgNB2O6薄膜电性能的影响