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AIN/Pt/LN structure for SAW sensors capable of operating at high temperature

机译:AIN / Pt / LN结构,用于能够在高温下工作的SAW传感器

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摘要

There is a need for wireless sensors able to operate in the intermediate temperature range (ITR) between 300 °C and 600 °C. Surface acoustic wave (SAW) sensors are promising candidates to solve this issue. However, existing SAW sensors most often fail in the ITR, due to the quick-degradation of the sensor housing in extreme conditions. A promising way to circumvent the issue is to use "package-less" devices, where the acoustic waves are guided in a multilayered structure where they are intrinsically protected from adverse environmental effects. We present here an innovative multilayered structure that fulfills all the basic requirements, to achieve a wireless and "package-less" SAW Sensor for the ITR. The structure is made of a thin A1N layer deposited on top of a Y + 128°LN substrate and equipped with buried Pt electrodes. Numerical simulations of the acoustic waves propagating in SAW resonators built on this structure reveal the existence of a useful Rayleigh-type SAW that propagates at the A1N/LN interface with a velocity up to 4500 m/s and a high electromechanical coupling k~2=5.6%, without leakage into the substrate. The existence of this mode is due to specific properties of the Y+ 128°LN cut, which are analyzed in detail in this paper. The performances of an optimized AIN/Pt/LN structure are also compared to the ones of previously suggested "package-less" structures, including AIN/ZnO/Sapphire. It is shown that better device characteristics can be expected from the AIN/Pt/LN structure in the ITR.
机译:需要能够在300°C至600°C的中间温度范围(ITR)中工作的无线传感器。表面声波(SAW)传感器有望解决该问题。但是,由于在极端条件下传感器外壳的快速降解,现有的SAW传感器最常无法通过ITR。解决该问题的一种有前途的方法是使用“无包装”设备,在该设备中,声波被引导到多层结构中,从本质上保护它们免受不利的环境影响。我们在这里介绍一种创新的多层结构,该结构可以满足所有基本要求,从而为ITR实现无线且“无封装”的SAW传感器。该结构由沉积在Y + 128°LN衬底顶部的薄AlN层制成,并配有埋入式Pt电极。在此结构上建立的声表面波谐振器中传播的声波的数值模拟表明,存在有用的瑞利型声表面波,该声波在A1N / LN界面上以高达4500 m / s的速度传播,并具有较高的机电耦合k〜2 = 5.6%,无渗入基材。这种模式的存在是由于Y + 128°LN切削的特殊性能,本文对此进行了详细分析。还将优化的AIN / Pt / LN结构的性能与先前建议的“无封装”结构(包括AIN / ZnO /蓝宝石)的性能进行了比较。结果表明,ITR中的AIN / Pt / LN结构可以期待更好的器件特性。

著录项

  • 来源
    《Applied Physics Letters》 |2017年第7期|073507.1-073507.4|共4页
  • 作者单位

    National University of Science and Technology "MISIS," 119049 Moscow, Russia;

    Carinthian Tech Research CTR AG, 9524 Villach, Austria;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 03:14:13

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