机译:应力介导的多铁性存储单元中的磁电写和读操作
Joint International Laboratory LIA LICS: V. A. Kotel'nikov Institute of Radioeng. and Electronics (IRE RAS), ul. Mokhovaya 11/7, Moscow 125009, Russia,Joint International Laboratory LIA LICS: University Lille, CNRS, Centrale Lille, ISEN, University Valenciennes, UMR 8520 - IEMN, F-59000 Lille, France,Joint International Laboratory LIA LICS: Moscow Technological University (MIREA) Vernadsky Avenue 78, Moscow 119454, Russia;
Joint International Laboratory LIA LICS: University Lille, CNRS, Centrale Lille, ISEN, University Valenciennes, UMR 8520 - IEMN, F-59000 Lille, France;
Joint International Laboratory LIA LICS: University Lille, CNRS, Centrale Lille, ISEN, University Valenciennes, UMR 8520 - IEMN, F-59000 Lille, France;
Joint International Laboratory LIA LICS: University Lille, CNRS, Centrale Lille, ISEN, University Valenciennes, UMR 8520 - IEMN, F-59000 Lille, France;
Joint International Laboratory LIA LICS: University Lille, CNRS, Centrale Lille, ISEN, University Valenciennes, UMR 8520 - IEMN, F-59000 Lille, France;
Joint International Laboratory LIA LICS: University Lille, CNRS, Centrale Lille, ISEN, University Valenciennes, UMR 8520 - IEMN, F-59000 Lille, France;
Joint International Laboratory LIA LICS: University Lille, CNRS, Centrale Lille, ISEN, University Valenciennes, UMR 8520 - IEMN, F-59000 Lille, France,Joint International Laboratory LIA LICS: Wave Research Center, A.M.Prokhorov GPI, RAS, ul. Vavilova 38, Moscow 119991, Russia;
Joint International Laboratory LIA LICS: V. A. Kotel'nikov Institute of Radioeng. and Electronics (IRE RAS), ul. Mokhovaya 11/7, Moscow 125009, Russia,Moscow Institute of Physics and Technology, Dolgoprudny, Institutskiy lane, 9,141700, Russia;
Joint International Laboratory LIA LICS: V. A. Kotel'nikov Institute of Radioeng. and Electronics (IRE RAS), ul. Mokhovaya 11/7, Moscow 125009, Russia,Moscow Institute of Physics and Technology, Dolgoprudny, Institutskiy lane, 9,141700, Russia;
机译:存储,写入和读取操作的温度对多层单元NAND闪存的影响
机译:通过使用独立的存储设备进行存储单元的节能写/读操作,并使用MIS隧道二极管传感器进行远程读取
机译:面积延迟能量敏感型SRAM存储单元和M×N并行读写存储阵列,用于量子点元胞自动机
机译:使用6T2MTJ单元的1.5nsec / 2.1nsec随机读取/写入周期1Mb STT-RAM,具有用于非易失性电子存储器的后台写入功能
机译:8端口S-RAM存储单元,可同时进行8次写入或16次读取。
机译:在多铁性设备中分离读写单元
机译:应力介导的磁电存储器单元N×(TBCO2 / FECO)/ PMN-PT的动态