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Electrically tuned photoelectrochemical properties of ferroelectric nanostructure NaNbO_3 films

机译:铁电纳米结构NaNbO_3薄膜的电调谐光电化学性能

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摘要

Photoelectrochemical (PEC) properties of NaNbO_3 nanostructure ferroelectric films are investigated, and it is demonstrated that the efficiency of PEC water splitting can be tuned (7%-23%) by electrical polarization of the NaNbO_3 films. The NaNbO_3 photoelectrode is fabricated using hydrothermally synthesized NaNbO_3 nanoparticles. Compared to the as-prepared photoanode, photocurrent is enhanced from 0.31 to 0.51 mA/cm~2 (at 1 V vs. Ag/AgCl) for the negatively polarized NaNbO_3 film, whereas the photocurrent is found to decrease from 0.31 to 0.09 mA/cm~2 for the positively polarized NaNbO_3 film. The change in the photoelectrochemical activity after the polarization of NaNbo_3 films has been attributed to the change in the conduction/valence band bending at the semiconductor/ electrolyte interface, leading to a change in the efficiency of charge transfer at the interface. Mott-Schottky studies confirmed the change in band bending after polarization, and electrochemical impedance spectroscopy studies confirmed the modulation in the charge transfer process after polarization.
机译:研究了NaNbO_3纳米结构铁电薄膜的光电化学性能,并证明通过NaNbO_3薄膜的电极化可以调节PEC的水分解效率(7%-23%)。使用水热合成的NaNbO_3纳米粒子制造NaNbO_3光电极。与制备的光电阳极相比,负极化NaNbO_3薄膜的光电流从0.31增强到0.51 mA / cm〜2(在1 V vs. Ag / AgCl时),而光电流从0.31降低到0.09 mA / cm〜2正极化的NaNbO_3薄膜的cm〜2。 NaNbo_3薄膜极化后,光电化学活性的变化归因于半导体/电解质界面处的导带/价带弯曲的变化,从而导致界面处电荷转移效率的改变。 Mott-Schottky研究证实了极化后能带弯曲的变化,电化学阻抗谱研究证实了极化后电荷转移过程中的调制。

著录项

  • 来源
    《Applied Physics Letters》 |2017年第15期|152902.1-152902.5|共5页
  • 作者

    Simrjit Singh; Neeraj Khare;

  • 作者单位

    Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India;

    Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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