机译:dium掺杂的Ge_2Sb_2Te_5,用于高速和低功耗相变存储器
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai 200050, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai 200050, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai 200050, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai 200050, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai 200050, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai 200050, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai 200050, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai 200050, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai 200050, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai 200050, Peoples R China;
机译:组成匹配的氮掺杂Ge_2Sb_2Te_5 / Ge_2Sb_2Te_5超晶格状结构,用于相变随机存取存储器
机译:碳掺杂的Ge_2Sb_2Te_5相变材料:高密度相变存储应用的候选材料
机译:SiO_2掺杂Ge_2Sb_2Te_5薄膜的相变行为在相变随机存取存储器中的应用
机译:底部电极触点(BEC)对相变随机存取存储器中N_2掺杂GE_2SB_2TE_5(N-GST)的相变的影响
机译:具有相变随机存取存储器的氮掺杂锗锑碲化物的超晶格状结构。
机译:dium掺杂为相变随机存取存储器应用带来了Sb2Te合金速度的改善
机译:钪掺杂带来SB2TE合金的速度改进,用于相变随机存取存储器应用