机译:(010)和(001)衬底上掺Si的β-Ga_2O_3薄膜的LPCVD同质外延
Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA;
Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA;
Ohio State Univ, Dept Mat Sci & Engn, 116 W 19Th Ave, Columbus, OH 43210 USA;
Ohio State Univ, Dept Mat Sci & Engn, 116 W 19Th Ave, Columbus, OH 43210 USA;
Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA;
机译:具有优异传输性能的掺Si(010)β-Ga_2O_3薄膜的MOCVD同质外延
机译:MOCVD掺杂(010)β-GA_2O_3薄膜具有优异的运输性能
机译:(010)Ga_2O_3衬底上的β-(Al_xGa_(1-x))_ 2O_3薄膜的MOCVD外延和N型掺杂
机译:LPCVD SiC膜的生长和应力表征沉积在裸,碳化和氧化Si(001)基材上
机译:通过溅射沉积在硅(001)衬底上沉积的金薄膜的表面形态。
机译:研究(010)-VO2 /(001)-YSZ外延薄膜中的金属-绝缘体转变和结构相变
机译:低压化学气相沉积(LpCVD)合成及表征混合相锐钛矿型TiO2和钠掺杂TiO2(B)薄膜