Improved memory characteristics for nonvolatile memory by using a double-potential well charge trapping layer

摘要

A memory capacitor incorporating a designed ZrxSi(1-x)O(2) trapping layer with a double-potential well bandgap is fabricated and investigated. Compared to single potential well and flat energy band, the double-potential well improves memory characteristics, and a faster program time of 9 x 10(-6) s at + 6 V flat band voltage shift, a lower charge loss of 3.6% at 200 degrees C up to 10(4) s, and a wider charge loss temperature insensitive range of 20 degrees C-134 degrees C can be obtained. The results indicate that the double-potential well bandgap is an appealing energy band structure for future nonvolatile memory applications. (C) 2019 The Japan Society of Applied Physics