Stochastic Resonance in Schottky Wrap Gate-controlled GaAs Nanowire Field-Effect Transistors and Their Networks

摘要

Investigation of stochastic resonance in GaAs-based nanowire field-effect transistors (FETs) controlled by Schottky wrap gate and their networks is described. When a weak pulse train is given to the gate of the FET operating in a subthreshold region, the correlation between the input-pulse and source-drain current increases by adding input noise. Enhancement of the correlation is observed in a summing network of the FETs. Measured correlation coefficient of the present system can be larger than that in a linear system in the wide range of noise. An analytical model based on the electron motion over a gate-induced potential barrier quantitatively explains the experimental behaviors.