High-performance Poly(3-hexylthiophene) Field-effect Transistors Fabricated By A Slide-coating Method

摘要

Highly oriented thin-films of poly(3-hexylthiophene) (P3HT) have been successfully fabricated by slide-coating method, in which the chloroform solution is sandwiched between a Si wafer and a slide glass, and followed by slow drawing of the Si wafer with respect to the slide glass. The performance of this organic field-effect transistor (OFET) based on the P3HT film exhibit high-performance of up to 0.056 cm~2 V~(-1) s~(-1) in FET mobility. This simple solution process is an effective method to fabricate the well-ordered structure of the P3HT film and its OFETs.