首页> 外文期刊>Applied physics express >Nano- and Microdot Array Formation of FeSi_2 by Nanosecond Excimer Laser-Induced Forward Transfer
【24h】

Nano- and Microdot Array Formation of FeSi_2 by Nanosecond Excimer Laser-Induced Forward Transfer

机译:纳秒准分子激光诱导的正向转移形成FeSi_2的纳米和微点阵列

获取原文
获取原文并翻译 | 示例
           

摘要

Fabrication of FeSi_2 nano- and microdot array was performed by utilizing droplet ejection through nanosecond laser-induced forward transfer (ns-LIFT). An amorphous FeSi_2 source film on a transparent support was illuminated from the support by a nanosecond excimer laser pulse patterned into migcrogrid form, resulting in size- and site-controlled deposition of microdot array onto a silicon substrate. Micro-Raman spectroscopy confirmed β-FeSi_2 crystalline phase even on unheated substrates. Moreover, the dot size was successfully reduced to approximately 500nm in diameter, smaller than any previously reported by ns-LIFT. This technique is useful for integrating functional nano- and microdots under atmospheric room-temperature conditions.
机译:FeSi_2纳米和微点阵列的制造是通过通过纳秒激光诱导的正向转移(ns-LIFT)进行液滴喷射来完成的。用纳秒准分子激光脉冲将透明点阵上的非晶FeSi_2源膜从点阵照亮,该准分子激光脉冲化成米格列格形式,从而在硅基板上进行大小和位置受控的微点阵列沉积。显微拉曼光谱法甚至在未加热的基材上也能确定β-FeSi_2晶相。此外,点尺寸已成功减小到直径约500nm,小于ns-LIFT先前报告的任何尺寸。此技术对于在大气室温条件下集成功能性纳米点和微点很有用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号