Improvement In Mobility And Stability Of N-type Organic Field-effect Transistors With A Hole Transporting Interfacial Layer

摘要

Field-effect electron mobility and stability of N,N'-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8H) improved when a hole-transporting layer, used in organic light-emitting diodes, was inserted between the gate insulator and the channel layer. This result suggests that insertion of an electronically active interfacial layer of an organic semiconductor is more effective in eliminating electron traps of the insulator surface compared to conventional surface treatment to obtain an inert surface.