机译：在半极性（3031）自由站立GaN衬底上生长的InGaN / GaN蓝色激光二极管
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.;
rnElectrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.;
rnElectrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.;
rnElectrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.;
rnMaterials Department, University of California, Santa Barbara, CA 93106, U.S.A.;
rnOptoelectronic Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan;
rnMaterials Department, University of California, Santa Barbara, CA 93106, U.S.A.;
rnMaterials Department, University of California, Santa Barbara, CA 93106, U.S.A. Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.;
rnMaterials Department, University of California, Santa Barbara, CA 93106, U.S.A.;
rnMaterials Department, University of California, Santa Barbara, CA 93106, U.S.A. Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.;
机译：在独立式GaN衬底上生长的InGaN / GaN多量子阱蓝色发光二极管中的效率下降
机译：在独立的半极性（1122）氮化镓衬底上制造的426 Nm Ingan / gan激光二极管的演示
机译：Semipolar {11（2）覆盖杆2} Ingan / GaN多量子井光学泵浦激光二极管在Si（111）基板上选择性地生长
机译：基于ingan / gan / alggs的激光二极管在独立的GaN基板上生长
机译：在半极性（202′1′）GaN衬底上的高功率蓝色激光二极管。
机译：直接在Si上生长的室温连续波电泵浦InGaN / GaN量子阱蓝色激光二极管
机译：高质量的Semipolar GaN / Sapphire模板中生长高效的半极性IngaN长波长发光二极管和蓝色激光二极管的研制
机译：在HpVE生长的模板和自支撑GaN衬底上的N型GaN层的mOCVD生长和蚀刻
