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Multi-Junction Switching in Bi_2Sr_(1.6)La_(0.4)CuO_(6+δ) Intrinsic Josephson Junctions

机译:Bi_2Sr_(1.6)La_(0.4)CuO_(6 +δ)本征约瑟夫森结中的多结切换

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摘要

We study the dynamics of multi-junction switching (MJS): several intrinsic Josephson junctions (IJJs) in an array switch to the finite voltage state simultaneously. The number of multi-switching junctions (N) was successfully tuned by changing the load resistance serially connected to an Bi_2Sr_(1.6)La_(0.4)CuO_(6+δ) IJJ array. The independence of the escape rates of N in the macroscopic quantum tunneling regime indicates that MJS is a successive switching process rather than a collective process. The origin of MJS is explained by the gradient of a load curve and the relative magnitudes of the switching currents of quasiparticle branches in the current-voltage plane.
机译:我们研究了多结开关(MJS)的动力学:阵列中的多个固有约瑟夫逊结(IJJs)同时切换到有限电压状态。通过改变串联到Bi_2Sr_(1.6)La_(0.4)CuO_(6 +δ)IJJ阵列的负载电阻,成功地调节了多开关结的数量(N)。宏观量子隧穿体系中N逸出速率的独立性表明MJS是一个连续的交换过程,而不是一个集体过程。 MJS的起源是通过负载曲线的斜率和准粒子分支在电流-电压平面中的开关电流的相对大小来解释的。

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  • 来源
    《Applied physics express》 |2010年第4期|P.043101.1-043101.3|共3页
  • 作者单位

    Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Tsukuba, Ibaraki 305-8568, Japan;

    rnNanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Tsukuba, Ibaraki 305-8568, Japan;

    rnNanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Tsukuba, Ibaraki 305-8568, Japan;

    rnNanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Tsukuba, Ibaraki 305-8568, Japan;

    rnNanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Tsukuba, Ibaraki 305-8568, Japan;

    rnNanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Tsukuba, Ibaraki 305-8568, Japan;

    rnNanotechnology Research Institute, AIST, Central 2, Tsukuba, Ibaraki 305-8568, Japan;

    rnNanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Tsukuba, Ibaraki 305-8568, Japan;

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