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机译:用于化学剥离工艺的GaN牺牲缓冲层插入GaN /蓝宝石衬底中
Department of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan 402, R.O.C.;
rnDepartment of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan 402, R.O.C.;
rnDepartment of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan 402, R.O.C.;
rnDepartment of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan 402, R.O.C.;
rnDepartment of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan 402, R.O.C.;
rnDepartment of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan 402, R.O.C.;
rnDepartment of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan 402, R.O.C.;
rnDepartment of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan 402, R.O.C.;
机译:使用AIN /条状图案的SiO_2牺牲层从Eco-GaN模板化学剥离工艺
机译:在具有CrN缓冲层的c-蓝宝石衬底上生长的GaN外延膜的化学剥离
机译:通过化学剥离工艺使用图案化氧化物牺牲层的薄膜GaN LED
机译:使用牺牲ZnO模板层将GaN直接键合到玻璃基板上的新工艺,以化学方式将GaN从c-蓝宝石上剥离
机译:氮化镓/蓝宝石界面和蓝宝石衬底上缓冲层的TEM表征通过MOCVD。
机译:用HVPE使用组合缓冲层在蓝宝石上制造2英寸独立的GaN衬底
机译:Movpe反应器中蓝宝石衬底上GaN牺牲层的原位制备用于过度分离GaN晶体
机译:低压金属有机化学气相沉积法研究基面蓝宝石和siC衬底上alN和GaN层初始生长的微观结构比较