Extraction of Schottky barrier height in Hg_(0.702)Cd_(0.298)Te photovoltaic infrared detector pixel arrays by transient photovoltage measurements

摘要

A novel method for extracting the Schottky barrier height (SBH) of a pn-junction-type HgCdTe photodetector by photovoltage measurement has been proposed. The photovoltages of the pn junction and Schottky junction are saturated by the bias light and transient laser pulses. The SBH is obtained as 0.228 eV, which is basically in agreement with the value obtained by the current-voltage technique. Because of the absence of complication due to the interference of the pn junction in the photovoltage measurement, this method is suitable for extracting the low SBH of the pn-junction-type photodiode, whose rectifying behavior of the Schottky contact is unclear.