An X-Band GaN HEMT Oscillator with Four-Path Inductors

摘要

An X-band GaN HEMT oscillator implemented with the WIN 0.25 mu m GaN HEMT technology is proposed. The oscillator consists of a HEMT amplifier with an LC feedback network with four-path inductors. With the supply voltage of V-DD = 2 V, the GaN VCO current and power consumption of the oscillator are 10.8 mA and 21.6mW, respectively. The oscillator can generate single-ended signal at 8.82 GHz and it also supplies output power 1.24 dBm. At 1MHz frequency offset from the carrier the phase noise is 124.95 dBc/Hz. The die area of the GaN HEMT oscillator is 2 x 1 mm(2).